Effects of Epitaxial Lift off on the Dc, Rf and Thermal Properties of Mesfets on Various Host Materials
نویسندگان
چکیده
In this paper we present an in depth investigation on the effects of epitaxial lift off (ELO) on GaAs MESFETs. DC and microwave characteristics as well as thermal effects are considered. Devices were fabricated on a GaAs foundry process and transplanted by ELO. ELO is a technology by which epitaxially grown layers are lifted off from their growth substrate and are subsequently re-attached to a new host substrate. Host materials considered are InP, quartz and silicon with resistivities ranging from 11 mΩcm to 50 Ωcm. Published in IEEE Transaction on Electron Devices vol. 46, no. 7, July 1998 pp. 1407-1413 2
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